2004. 1. 28 1/3 semiconductor technical data ktc3730v epitaxial planar npn transistor revision no : 1 vhf/uhf wide band amplifier application. features low noise figure, high gain. small rbb?cc (typ. 4ps). maximum rating (ta=25 ) dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. emitter 2. base 3. collector + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 11 v emitter-base voltage v ebo 3 v collector current i c 50 ma collector power dissipation p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =10v, i e =0 - - 500 na emitter cut-off current i ebo v eb =2v, i c =0 - - 0.5 a collector-emitter saturation voltage v ce(sat) i c =10ma, i b =5ma - - 0.5 v dc current gain h fe (note) v ce =10v, i c =5ma 56 - 180 collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 0.8 1.5 pf collector-base time constant rbb?cc v ce =10v, i e =10ma, f=31.8mhz - 4 12 ps transition frequency f t v ce =10v, i c =10ma, f=500mhz 1.4 3.2 - ghz noise figure nf v ce =6v, i c =2ma, f=500mhz, rg=50 - 3.5 - db h rank type name marking r fe note) h fe classification : f:56~120, g:82~180
2004. 1. 28 2/3 ktc3730v revision no : 1 collector current i (ma) h - i fe dc current gain h c collector current i (ma) c c fe v =10v 300 100 50 30 10 500 ce v =10v ce i =0a e collector power dissipation p (mw) c collector saturation voltage v (mw) ce(sat) 0 ambient temperature ta ( c) pc - ta typical characteristics (ta=25 c) 50 100 150 0 100 200 300 reverse transfer capacitance c (pf) output capacitance c (pf) ob re 0.1 collector-base voltage v (v) cb c , c - v ob re cb 0.3 0.5 1 3 5 30 50 10 0.1 0.3 0.5 1 3 5 30 50 10 f=1mhz c ob c re 0.1 0.3 0.5 1 3 5 insertion gain s (db) 2le 2 0.5 s - i 2le c 2 135103050 f=500mhz 0 5 10 15 frequency f (ghz) v =10v ce i =10ma c insertion gain s (db) 2le 2 0.1 s - f 2le 2 0.3 0.5 1 3 0 10 20 30 5 15 25 collector current i (ma) v - i ce(sat) c c 300 100 50 30 10 500 i /i =10 cb i /i =2 cb 0.1 0.3 0.5 1 3 5 30 50 10
2004. 1. 28 3/3 ktc3730v revision no : 1 collector current i (ma) nf - i noise figure nf (db) noise figure nf (db) c c v =6v f=500mhz 10 20 0 ce 0.1 0.3 0.5 1 3 5 30 50 10 e emittercurrent i (ma) t transition frequency f (ghz) f - i te collector emitter voltage v (v) i =10ma f=500mhz c insertion gain s (db) 2le 2 0 s - v 2le ce ce 2 24 6 810 0 5 20 15 10 25 collector emitter voltage v (v) i =10ma f=500mhz c 0 nf - v ce ce 24 6 810 0 5 20 15 10 25 collector current i (ma) rbb. cc - i collector base time constant cc. rbb (ps) c c v =10v f=31.8mhz 30 10 5 3 1 50 ce 0.1 0.3 0.5 1 3 5 30 50 10 v =10v 3 1 0.5 0.3 0.1 5 ce -0.1 -0.3-0.5 -1 -3 -5 -30 -50 -10
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